| PART |
Description |
Maker |
| 3PT068080JL |
PHOTO TRANSISTOR CHIPS
|
Silan Microelectronics Joint-stock
|
| BPW96 |
Photo Transistor, PHOTO TRANSISTOR DETECTOR, PLASTIC PACKAGE-2
|
Vishay Semiconductors
|
| TPS617 E006915 |
PHOTO TRANSISTOR FOR PHOTO INTERRUPLER
From old datasheet system
|
Toshiba
|
| TPS618 E006916 |
PHOTO TRANSISTOR FOR PHOTO INTERRUPLER
From old datasheet system
|
Toshiba
|
| TLP827 TLP822 |
PHOTO INTERRUPTERS INFRARED LED PHOTO TRANSISTOR
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SSB-COB6527GW |
65mm x 27mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 565mm GREEN CHIPS, 44 CHIPS, 4.2V 220mA
|
LUMEX INC.
|
| TLP270D |
Photocoupler GaAs Ired & Photo .MOS FET / Photo .Transistor
TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET / Photo−Transistor
TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET / Photo-Transistor
|
Toshiba Semiconductor
|
| TLP628 TLP628-2 TLP628-4 |
Photocoupler GaAs Ired & Photo -Transistor
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
|
Toshiba Semiconductor
|
| BM-20EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-10EG58MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| TLP629 TLP629-4 TLP629-2 |
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
|
TOSHIBA[Toshiba Semiconductor]
ETC
|
| TLP371 TLP372 |
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
|
TOSHIBA[Toshiba Semiconductor]
|
